Study of the Influence of the Content of a Potassium Fluoride Layer on the Capacitance and Conductance of a CIGS Thin-Film Solar Cell

Djimba Niane; Ousmane Diagne; Demba Diallo; Gerome Sambou; Moustapha Dieng

doi:doi:10.11648/j.ajee.20180604.11

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Study of the Influence of the Content of a Potassium Fluoride Layer on the Capacitance and Conductance of a CIGS Thin-Film Solar Cell

Djimba Niane, Ousmane Diagne, Demba Diallo, Gerome Sambou, Moustapha Dieng

Published in American Journal of Energy Engineering (Volume 6, Issue 4)

Received: 27 October 2018 Accepted: 15 November 2018 Published: 20 December 2018

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Abstract

In this paper, a study by simulation of the capacitance and conductance of carriers of a heterojunction composed of a layer of Zinc oxide (ZnO), a layer of cadmium sulphide (CdS) and a layer of CIGS under the influence of a potassium fluoride (KF) layer placed in the CIGS / CdS interface is made. The simulation done with the SCAPS-1D software. Measurements on the capacitance-tension, the conductance-tension, the capacitance-frequency and the conductance-frequency are taken. The capacitance-voltage measurement shows an increase in capacitance as a function of the voltage and a decrease in its module when the KF layer is present in the CdS / CIGS interface. The conductance-voltage measurement also shows an increase in the conductance as a function of the voltage and when the KF layer isn’t present. The capacitance-frequency measurement shows a constancy of capacitance for the low values of the frequency and a decrease for the large values of the frequency. While the conductance-frequency characteristic shows an increase in the conductance with the frequencies. The measurements conductance-frequency and capacitance-frequency show a decrease in their modules when the KF layer is put into the CdS / CIGS interface. Besides, the total capacitance and the total conductance of the solar cell are determined according to the thickness of the KF layer. The measures reveal aussi that the capacitance and the conductance decrease with the increase in the thickness of the KF layer. The decrease in capacitance is caused by a passivation of the interface states while that of the conductivity is caused by the increase of the resistivity of the CIGS layer.

Published in	American Journal of Energy Engineering (Volume 6, Issue 4)
DOI	10.11648/j.ajee.20180604.11
Page(s)	38-43
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2018. Published by Science Publishing Group

Keywords

Solar Cells, Thin-Film, CIGS, KF, Capacitance, Conductance, Simulation

References

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[2]	M. A. Contreras, B. Egaas, P. Dippo, J. Webb, J. Granata, K. Ramanathan, S. Asher, A. Swartzlander, and R. Nouﬁ, “On the role of Na and modiﬁ-cations to Cu (In, Ga) Se2 absorber materials using thin-MF (M = Na, K, Cs) precursor layers,” in Proc. 26th IEEE Photovoltaic Spec. Conf., 1997, pp. 359–362.
[3]	R. Wuerz, A. Eicke, F. Kessler, S. Paetel, S. Efimenko, and C. Schlegel, “CIGS thin-film solar cells and modules on enamelled steel substrates,” Sol. Energy Mater. Sol. Cells, vol. 100, May 2012, pp: 132–137.
[4]	A. Chirila, P. Reinhard, F. Pianezzi, P. Bloesch, A. R. Uhl, C. Fella, L. Kranz, D. Keller, C. Gretener, H. Hagendorfer, D. Jaeger, R. Erni, S. Nishiwaki, S. Buecheler, and A. N. Tiwari, “Potassium-induced surface modification of cu (in, ga)se2 thin films for high-efficiency solar cells,” Nature Materials, vol. advance online publication, vol (12)pp 1-5 Nov. 2013.
[5]	P. Jackson, D. Hariskos, R. Wuerz, O. Kiowski, A. Bauer, T. M. Friedlmeier, and M. Powalla, “Properties of Cu (In, Ga)Se2 solar cells with new record efficiencies up to 21.7%,” Phys. Status Solidi RRL – Rapid Res. Lett., vol. 9, no. 1, Jan. 2015, pp. 28–31.
[6]	K. Decock, S. Khelifi, S. Buecheler, F. Pianezzi, A. N. Tiwari, M. Burgelman, Defect distributions in thin film solar cells deduced from admittance measurements under different bias voltages, Journal of Applied Physics, 110 (2011) 063722.
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[11]	J. T. Heath, J. D. Cohen, and W. N. Shafarman, J. Appl. Phys. 95, 1000 (2004).
[12]	M. Burgelman, P. Nollet, S. Degrave, “Modelling polycrystalline semiconductor solar cells”, Thin Solid Films 361/362 (2000) pp.527–532.
[13]	M. Burgelman, K. Decock, S. Khelifi and A. Abass, “Advanced electrical simulation of thin film solar cells”, Thin Solid Films, 535 (2013) 296-301.
[14]	A. Niemegeers, S. Gillis, M. Burgelman, A user program for realistic simulation of polycrystalline heterojunction solar cells: SCAPS-1D, Proceedings of the 2nd World Conference on Photovoltaic Energy Conversion, Wien, 1998, pp. 672-675.
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Djimba Niane, Ousmane Diagne, Demba Diallo, Gerome Sambou, Moustapha Dieng. (2018). Study of the Influence of the Content of a Potassium Fluoride Layer on the Capacitance and Conductance of a CIGS Thin-Film Solar Cell. American Journal of Energy Engineering, 6(4), 38-43. https://doi.org/10.11648/j.ajee.20180604.11

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ACS Style

Djimba Niane; Ousmane Diagne; Demba Diallo; Gerome Sambou; Moustapha Dieng. Study of the Influence of the Content of a Potassium Fluoride Layer on the Capacitance and Conductance of a CIGS Thin-Film Solar Cell. Am. J. Energy Eng. 2018, 6(4), 38-43. doi: 10.11648/j.ajee.20180604.11

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AMA Style

Djimba Niane, Ousmane Diagne, Demba Diallo, Gerome Sambou, Moustapha Dieng. Study of the Influence of the Content of a Potassium Fluoride Layer on the Capacitance and Conductance of a CIGS Thin-Film Solar Cell. Am J Energy Eng. 2018;6(4):38-43. doi: 10.11648/j.ajee.20180604.11

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@article{10.11648/j.ajee.20180604.11,
  author = {Djimba Niane and Ousmane Diagne and Demba Diallo and Gerome Sambou and Moustapha Dieng},
  title = {Study of the Influence of the Content of a Potassium Fluoride Layer on the Capacitance and Conductance of a CIGS Thin-Film Solar Cell},
  journal = {American Journal of Energy Engineering},
  volume = {6},
  number = {4},
  pages = {38-43},
  doi = {10.11648/j.ajee.20180604.11},
  url = {https://doi.org/10.11648/j.ajee.20180604.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajee.20180604.11},
  abstract = {In this paper, a study by simulation of the capacitance and conductance of carriers of a heterojunction composed of a layer of Zinc oxide (ZnO), a layer of cadmium sulphide (CdS) and a layer of CIGS under the influence of a potassium fluoride (KF) layer placed in the CIGS / CdS interface is made. The simulation done with the SCAPS-1D software. Measurements on the capacitance-tension, the conductance-tension, the capacitance-frequency and the conductance-frequency are taken. The capacitance-voltage measurement shows an increase in capacitance as a function of the voltage and a decrease in its module when the KF layer is present in the CdS / CIGS interface. The conductance-voltage measurement also shows an increase in the conductance as a function of the voltage and when the KF layer isn’t present. The capacitance-frequency measurement shows a constancy of capacitance for the low values of the frequency and a decrease for the large values of the frequency. While the conductance-frequency characteristic shows an increase in the conductance with the frequencies. The measurements conductance-frequency and capacitance-frequency show a decrease in their modules when the KF layer is put into the CdS / CIGS interface. Besides, the total capacitance and the total conductance of the solar cell are determined according to the thickness of the KF layer. The measures reveal aussi that the capacitance and the conductance decrease with the increase in the thickness of the KF layer. The decrease in capacitance is caused by a passivation of the interface states while that of the conductivity is caused by the increase of the resistivity of the CIGS layer.},
 year = {2018}
}

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TY  - JOUR
T1  - Study of the Influence of the Content of a Potassium Fluoride Layer on the Capacitance and Conductance of a CIGS Thin-Film Solar Cell
AU  - Djimba Niane
AU  - Ousmane Diagne
AU  - Demba Diallo
AU  - Gerome Sambou
AU  - Moustapha Dieng
Y1  - 2018/12/20
PY  - 2018
N1  - https://doi.org/10.11648/j.ajee.20180604.11
DO  - 10.11648/j.ajee.20180604.11
T2  - American Journal of Energy Engineering
JF  - American Journal of Energy Engineering
JO  - American Journal of Energy Engineering
SP  - 38
EP  - 43
PB  - Science Publishing Group
SN  - 2329-163X
UR  - https://doi.org/10.11648/j.ajee.20180604.11
AB  - In this paper, a study by simulation of the capacitance and conductance of carriers of a heterojunction composed of a layer of Zinc oxide (ZnO), a layer of cadmium sulphide (CdS) and a layer of CIGS under the influence of a potassium fluoride (KF) layer placed in the CIGS / CdS interface is made. The simulation done with the SCAPS-1D software. Measurements on the capacitance-tension, the conductance-tension, the capacitance-frequency and the conductance-frequency are taken. The capacitance-voltage measurement shows an increase in capacitance as a function of the voltage and a decrease in its module when the KF layer is present in the CdS / CIGS interface. The conductance-voltage measurement also shows an increase in the conductance as a function of the voltage and when the KF layer isn’t present. The capacitance-frequency measurement shows a constancy of capacitance for the low values of the frequency and a decrease for the large values of the frequency. While the conductance-frequency characteristic shows an increase in the conductance with the frequencies. The measurements conductance-frequency and capacitance-frequency show a decrease in their modules when the KF layer is put into the CdS / CIGS interface. Besides, the total capacitance and the total conductance of the solar cell are determined according to the thickness of the KF layer. The measures reveal aussi that the capacitance and the conductance decrease with the increase in the thickness of the KF layer. The decrease in capacitance is caused by a passivation of the interface states while that of the conductivity is caused by the increase of the resistivity of the CIGS layer.
VL  - 6
IS  - 4
ER  -

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Author Information

Djimba Niane

Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
Ousmane Diagne

Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
Demba Diallo

Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
Gerome Sambou

Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal
Moustapha Dieng

Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal

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APA Style

Djimba Niane, Ousmane Diagne, Demba Diallo, Gerome Sambou, Moustapha Dieng. (2018). Study of the Influence of the Content of a Potassium Fluoride Layer on the Capacitance and Conductance of a CIGS Thin-Film Solar Cell. American Journal of Energy Engineering, 6(4), 38-43. https://doi.org/10.11648/j.ajee.20180604.11

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ACS Style

Djimba Niane; Ousmane Diagne; Demba Diallo; Gerome Sambou; Moustapha Dieng. Study of the Influence of the Content of a Potassium Fluoride Layer on the Capacitance and Conductance of a CIGS Thin-Film Solar Cell. Am. J. Energy Eng. 2018, 6(4), 38-43. doi: 10.11648/j.ajee.20180604.11

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AMA Style

Djimba Niane, Ousmane Diagne, Demba Diallo, Gerome Sambou, Moustapha Dieng. Study of the Influence of the Content of a Potassium Fluoride Layer on the Capacitance and Conductance of a CIGS Thin-Film Solar Cell. Am J Energy Eng. 2018;6(4):38-43. doi: 10.11648/j.ajee.20180604.11

Copy | Download

@article{10.11648/j.ajee.20180604.11,
  author = {Djimba Niane and Ousmane Diagne and Demba Diallo and Gerome Sambou and Moustapha Dieng},
  title = {Study of the Influence of the Content of a Potassium Fluoride Layer on the Capacitance and Conductance of a CIGS Thin-Film Solar Cell},
  journal = {American Journal of Energy Engineering},
  volume = {6},
  number = {4},
  pages = {38-43},
  doi = {10.11648/j.ajee.20180604.11},
  url = {https://doi.org/10.11648/j.ajee.20180604.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajee.20180604.11},
  abstract = {In this paper, a study by simulation of the capacitance and conductance of carriers of a heterojunction composed of a layer of Zinc oxide (ZnO), a layer of cadmium sulphide (CdS) and a layer of CIGS under the influence of a potassium fluoride (KF) layer placed in the CIGS / CdS interface is made. The simulation done with the SCAPS-1D software. Measurements on the capacitance-tension, the conductance-tension, the capacitance-frequency and the conductance-frequency are taken. The capacitance-voltage measurement shows an increase in capacitance as a function of the voltage and a decrease in its module when the KF layer is present in the CdS / CIGS interface. The conductance-voltage measurement also shows an increase in the conductance as a function of the voltage and when the KF layer isn’t present. The capacitance-frequency measurement shows a constancy of capacitance for the low values of the frequency and a decrease for the large values of the frequency. While the conductance-frequency characteristic shows an increase in the conductance with the frequencies. The measurements conductance-frequency and capacitance-frequency show a decrease in their modules when the KF layer is put into the CdS / CIGS interface. Besides, the total capacitance and the total conductance of the solar cell are determined according to the thickness of the KF layer. The measures reveal aussi that the capacitance and the conductance decrease with the increase in the thickness of the KF layer. The decrease in capacitance is caused by a passivation of the interface states while that of the conductivity is caused by the increase of the resistivity of the CIGS layer.},
 year = {2018}
}

Copy | Download

TY  - JOUR
T1  - Study of the Influence of the Content of a Potassium Fluoride Layer on the Capacitance and Conductance of a CIGS Thin-Film Solar Cell
AU  - Djimba Niane
AU  - Ousmane Diagne
AU  - Demba Diallo
AU  - Gerome Sambou
AU  - Moustapha Dieng
Y1  - 2018/12/20
PY  - 2018
N1  - https://doi.org/10.11648/j.ajee.20180604.11
DO  - 10.11648/j.ajee.20180604.11
T2  - American Journal of Energy Engineering
JF  - American Journal of Energy Engineering
JO  - American Journal of Energy Engineering
SP  - 38
EP  - 43
PB  - Science Publishing Group
SN  - 2329-163X
UR  - https://doi.org/10.11648/j.ajee.20180604.11
AB  - In this paper, a study by simulation of the capacitance and conductance of carriers of a heterojunction composed of a layer of Zinc oxide (ZnO), a layer of cadmium sulphide (CdS) and a layer of CIGS under the influence of a potassium fluoride (KF) layer placed in the CIGS / CdS interface is made. The simulation done with the SCAPS-1D software. Measurements on the capacitance-tension, the conductance-tension, the capacitance-frequency and the conductance-frequency are taken. The capacitance-voltage measurement shows an increase in capacitance as a function of the voltage and a decrease in its module when the KF layer is present in the CdS / CIGS interface. The conductance-voltage measurement also shows an increase in the conductance as a function of the voltage and when the KF layer isn’t present. The capacitance-frequency measurement shows a constancy of capacitance for the low values of the frequency and a decrease for the large values of the frequency. While the conductance-frequency characteristic shows an increase in the conductance with the frequencies. The measurements conductance-frequency and capacitance-frequency show a decrease in their modules when the KF layer is put into the CdS / CIGS interface. Besides, the total capacitance and the total conductance of the solar cell are determined according to the thickness of the KF layer. The measures reveal aussi that the capacitance and the conductance decrease with the increase in the thickness of the KF layer. The decrease in capacitance is caused by a passivation of the interface states while that of the conductivity is caused by the increase of the resistivity of the CIGS layer.
VL  - 6
IS  - 4
ER  -

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